'A'
Title: General expressions for quantum transport in arbitrary potential profile: L-electron effect on AlAs-GaAs-AlAs double-barrier structure
Author(s): Chen CN
Source: JOURNAL OF APPLIED PHYSICS 97 (11): Art. No. 113704 JUN 1 2005
Author's address:
Far East Coll, Dept Elect Engn, Tainan, Taiwan
'B'
Title: Tunneling time and the post-tunneling position of an electron through a potential barrier in an anisotropic semiconductor
Author(s): Kim KY, Lee B
Source: SUPERLATTICES AND MICROSTRUCTURES 24 (6): 389-397 1998
Title: General expressions for quantum transport in arbitrary potential profile: L-electron effect on AlAs-GaAs-AlAs double-barrier structure
Author(s): Chen CN
Source: JOURNAL OF APPLIED PHYSICS 97 (11): Art. No. 113704 JUN 1 2005
Author's address:
Far East Coll, Dept Elect Engn, Tainan, Taiwan
'B'
Title: Tunneling time and the post-tunneling position of an electron through a potential barrier in an anisotropic semiconductor
Author(s): Kim KY, Lee B
Source: SUPERLATTICES AND MICROSTRUCTURES 24 (6): 389-397 1998
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