'A'
Absorption saturation of intersubband transition in InGaAs/AlAsSb quantum well characterized by absorption spectral analysis
Gopal AV, Yoshida H, Neogi A, Mozume T, Georgiev N, Wada O, Ishikawa H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
40 (10A): L1015-L1018 OCT 1 2001
Addresses:
Gopal AV, Femtosecond Technol Res Assoc, FESTA Labs, 5-5 Tokodai, Tsukuba, Ibaraki 3002635, Japan
Femtosecond Technol Res Assoc, FESTA Labs, Tsukuba, Ibaraki 3002635, Japan
New Energy & Ind Technol Dev Org, Tokyo 1706090, Japan
'B'
Modeling of intersubband and free-carrier absorption coefficients in heavily doped conduction-band quantum-well structures
Kim KY, Lee B, Lee C
IEEE JOURNAL OF QUANTUM ELECTRONICS
35 (10): 1491-1501 OCT 1999
Absorption saturation of intersubband transition in InGaAs/AlAsSb quantum well characterized by absorption spectral analysis
Gopal AV, Yoshida H, Neogi A, Mozume T, Georgiev N, Wada O, Ishikawa H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
40 (10A): L1015-L1018 OCT 1 2001
Addresses:
Gopal AV, Femtosecond Technol Res Assoc, FESTA Labs, 5-5 Tokodai, Tsukuba, Ibaraki 3002635, Japan
Femtosecond Technol Res Assoc, FESTA Labs, Tsukuba, Ibaraki 3002635, Japan
New Energy & Ind Technol Dev Org, Tokyo 1706090, Japan
'B'
Modeling of intersubband and free-carrier absorption coefficients in heavily doped conduction-band quantum-well structures
Kim KY, Lee B, Lee C
IEEE JOURNAL OF QUANTUM ELECTRONICS
35 (10): 1491-1501 OCT 1999
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번호 | 제목 | 글쓴이 | 날짜 | 조회 수 |
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