'A'

Absorption saturation of intersubband transition in InGaAs/AlAsSb quantum well characterized by absorption spectral analysis

Gopal AV, Yoshida H, Neogi A, Mozume T, Georgiev N, Wada O, Ishikawa H

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS

40 (10A): L1015-L1018 OCT 1 2001

Addresses:

Gopal AV, Femtosecond Technol Res Assoc, FESTA Labs, 5-5 Tokodai, Tsukuba, Ibaraki 3002635, Japan

Femtosecond Technol Res Assoc, FESTA Labs, Tsukuba, Ibaraki 3002635, Japan

New Energy & Ind Technol Dev Org, Tokyo 1706090, Japan



'B'

Modeling of intersubband and free-carrier absorption coefficients in heavily doped conduction-band quantum-well structures

Kim KY, Lee B, Lee C

IEEE JOURNAL OF QUANTUM ELECTRONICS

35 (10): 1491-1501 OCT 1999